| PART |
Description |
Maker |
| APT4016BN APT4018BN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 400V 31.0A 0.16 Ohm / 400V 29.0A 0.18 Ohm
|
http://
Advanced Power Technology
|
| APT4018HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 400V 22A 0.180 Ohm
|
Advanced Power Technology Ltd.
|
| APT40M82WVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 400V 44A 0.082 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| JANSR2N7405 FN4375 |
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 20 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| STS7C4F30L |
7 A, 30 V, 0.026 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET⑩ POWER MOSFET
P-CHANEL 30V - 0.027 OHM - 6A SO-8 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| JANSR2N7292 FN4293 |
25 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
From old datasheet system
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET 25 A, 100 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| STW16NA40 STW16NA40FI STH16NA40 STH16NA40FI W16NA4 |
N-Channel 400V-0.21Ω-16A - TO-247/ISOWATT218 Power MOS Transistors(Ｎ沟道功率ＭＯＳ晶体 N沟道400V -0.21Ω- 16A TO-247/ISOWATT218功率MOS晶体管（不适用马鞍山沟道功率晶体管
N - CHANNEL 400V - 0.21W - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
From old datasheet system
N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STS5PF30L |
P-CHANNEL 30V - 0.070 OHM - 5A SO-8 STRIPFET POWER MOSFET
|
ST Microelectronics
|
| FQU5N40 FQD5N40 FQD5N40TF FQD5N40TM |
400V N-Channel QFET
400V N-Channel MOSFET
400V N-Channel MOSFET(漏源电压00V、漏电流.4A的N沟道增强型MOS场效应管) 3.4 A, 400 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF3710LPBF IRF3710SPBF |
HEXFET? Power MOSFET ( VDSS = 100V , RDS(on) = 23mΩ , ID = 57A )
HEXFET㈢ Power MOSFET ( VDSS = 100V , RDS(on) = 23mヘ , ID = 57A )
|
International Rectifier
|
